供应磷化镓 GaP wafer

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关 键 词：磷化镓 GaP wafer

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发布时间：2016-09-23

Gallium Phosphide 
Material
:Dopant	Type	Diameter [mm]	  EPD [cm-2] 	Carrier Conc. [cm-3] 	Mobility [cm2/Vs]	 Orientation  	Resistivity [Ohmcm]
GaP:S 	N 	2",  3" 	90 	(100), (111), (110)	 
GaP:-
undoped 	N 	2",  3" 	<1*105 	90 	(100), (111), (110)	  

We offer materials in the form of:
---  epi-ready wafers:
Diameter: 2" (50.8±0.5mm) or (50.0±0.5mm); 3" (76.2±0.5mm) 
Orientation: ±0.1° or ±0.1° or ±0.1° 
Thickness: 350±20μm or as specified
Flats: US or EJ (15±2.0 mm / 8±2.0 mm) 
Surface finish:    Single side polished or double side polished