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产品数量：1000 个
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关 键 词：砷化铟 InAs wafer
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发布时间：2016-09-23
Typical Electrical Properties Dopant available S Zn Undoped Type of conductivity N P P Concentration ( cm -3 ) 1E17 - 3E18 1E17 - 5E18 x Hall Mobility ( cm2 / v.s. ) 10000 - 25000 100 - 500 > 20000 Standard Specification Growth method LEC Diameter ( mm ) 50.8 Thickness ( um ) 500 +/-25 um Conductivity Semi-conducting Orientation , , Off orientation From 2° to 10° off Flat options EJ or US SEMI. Std . Surface finish One side or two sides polished EPD ( cm-2) < 15000 or < 50000 Grade Epi polished grade , mechanical grade Package method Single wafer container with outer foil bag
