供应MICRON美光闪存MT29F16G08CB

价格：1起

深圳市想亚微电子

联系人：郝生

电话：13418849546

地址：深圳宝安区西乡三围汇庭居汇园504室

产品规格：MT29F16G08CB

产品数量：30000 个

包装说明：原厂原包装

关 键 词：MT29F16G08CBABA,MT29F16G08CBACA,MT29F16G08CBECB

行 业：

发布时间：2015-06-24

Features
Contact factory for part availability 
Open NAND Flash Interface (ONFI) 2.2-compliant1
Multiple-level cell (MLC) technology
 Organization 
–Page size x8: 4320 bytes (4096 + 224 bytes)
–Block size: 256 pages (1024K + 56K bytes)
–Plane size: 2 planes x 1024 blocks per plane
–Device size: 16Gb: 2048 blocks
 Synchronous I/O performance 
–Up to synchronous timing mode 5
–Clock rate: 10ns (DDR) 
–Read/write throughput per pin: 200MT/s
Asynchronous I/O performance 
–Up to asynchronous timing mode 5
–tRC/tWC: 20ns (MIN)
 Array performance 
–Read page: 75μs (MAX) 
–Program page: 1300μs (TYP)
–Erase block: 3ms (TYP)
Operating Voltage Range
–VCC: 2.7–3.6V 
–VCCQ: 1.7-1.95V, 2.7–3.6V 
Command set: ONFI NAND Flash Protocol
 Advanced Command Set
–Program cache 
–Read cache sequential
–Read cache random 
–One-time programmable (OTP) mode
–Multi-plane commands
–Multi-LUN operations
–Read unique ID
–Copyback 
First block (block address 00h) is valid when ship-ped from factory2 
RESET (FFh) required as first command after power-on 
 Operation status byte provides software method fordetecting: 
–Operation completion
–Pass/fail condition
–Write-protect status 
Data strobe (DQS) **s provide a hardware meth-od for synchronizing data DQ in the synchronousinterface 
Copyback operations supported within the planefrom which data is read
Operating temperature: 
–Commercial: 0oC to +70oC 
Die Outline 
Die size (stepping distance): 6.43380mm x8.83905mm 
Bond pad location and identification, see Bond PadLocations and Identification (page 5)
General Physical Specifications 
Nominal wafer thickness: 790μm ±25μm
Typical bond-pad metal thickness: 17.7k 
Typical topside passivation: 4k oxynitride over10.5k of silane oxide 
Metallization composition: 3k Pd over 10k Niover 3k Cu 
Options             
Interface:
- Asynchronous
- Synchronous
Marking
 MT29F16G08CBACA
 MT29F16G08CBECB
Form:Wafer                      3W
Testing:Standard probe          C1