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深圳市世微半导体有限公司
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地址:广东省深圳市 宝安区宝源路名优工业产品展示采购中心B座2区326
Super Low Gate Charge ** EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density TrenchtechnologyProduct SummaryBVDSSRDSONID30V7.6mΩ50ADescriptionThe AP50N03 is the high cell density trenchedN-ch MOSFETs, which provide excellent RDSONand gate charge for most of the synchronous buckconverter applications.The meet the RoHS and GreenProduct requirement, ** EAS guaranteed withfull function reliability approved.